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Creators/Authors contains: "Anyanwu, Uchechi"

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  1. ; ; (, 44th IEEE-PVSC)
    This paper discusses our experimental results obtained for several p-type polycrystalline Si wafers using transient photoconductance decay method in combination with a numerical model that accounts for the carrier density dependence of recombination lifetime. Using peak illumination intensities of up to 65 Suns, we are able to estimate the recombination rates for the various carrier recombination mechanisms separately. The model with such realistic recombination parameters produces a realistic diffusion length of minority carriers in Si at high optical injection. Our approach can be applied to the characterization of semiconductor materials for concentrator photovoltaics as well as to design of optoelectronic devices. 
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